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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES High Voltage : VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). Q A C KTA1807D/L TRIPLE DIFFUSED PNP TRANSISTOR I J H F 1 2 F 3 P L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current DC Pulse * ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -600 -600 -7 -1.0 -2.0 1.0 150 -55 150 UNIT V V V 1. BASE 2. COLLECTOR 3. EMITTER DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D DPAK A W A C I J Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50%. B D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E IPAK 2003. 3. 27 Revision No : 2 1/4 KTA1807D/L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time Note : hFE Classification O:30~80, Y:60~120. SYMBOL ICBO IEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf IC=-0.5A, RL=500 , IB1=-IB2=-0.1A, VCC=-250V TEST CONDITION VCB=-600V, IE=0 VEB=-7.0V, IC=0 VCE=-5.0V, IC=-0.1A VCE=-5.0V, IC=-0.5A IC=-0.3A, IB=-60mA IC=-0.3A, IB=-60mA VCE=-10V, IE=50mA VCB=-10V, IE=0, f=1MHz MIN. 30 5 TYP. -0.28 -0.85 28 42 0.1 3.5 0.08 MAX. -10 -10 120 -1.0 -1.2 0.5 5.0 0.5 s V V MHz pF UNIT A A 2003. 3. 27 Revision No : 2 2/4 KTA1807D/L REVERSE BIAS SAFE OPERATING AREA COLLECTOR CURRENT I C (mA) -1.0 COLLECTOR CURRENT I C (A) -100 -2 .0m A I C - V CE -1.8mA -1.6mA -1.4mA -0.8 -0.6 -0.4 VCEO (SUS) -80 -60 -40 -20 0 -1.2mA -1.0mA -0.8mA -0.6mA -0.4mA I B =-0.2mA -0.2 0 0 -200 -400 -600 -800 -1K 0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V BE -1.0 COLLECTOR CURRENT I C (A) -0.3 -0.1 -0.03 V CE =-5V h FE - I C 1K DC CURRENT GAIN h FE 300 100 30 10 3 1 -0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 V CE =-5V -0.01 -0.003 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.5 -1 -2 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A) COLLECTOR SATURATION VOLTAGE VCE(sat) (V) BASE SATURATION VOLTAGE VBE(sat) (V) VCE(sat) , VBE(sat) - I C -3 I C / I B =5 t 10 SWITCHING TIME t S 3 I C / I B =5 VCE =-250V I B1 =-I B2 - IC -1 t stg V BE(sat) 1 0.5 0.3 0.1 0.05 tf -0.3 -0.1 V CE(sat) -0.03 -0.005 -0.01 -0.03 -0.05 -0.1 -0.3 -0.5 -0.1 -0.3 -0.5 -1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 2 3/4 KTA1807D/L f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSIION FREQUENCY f T (MHz) 100 V CE =-5V C ob - VCB 200 I E =0 50 30 100 50 30 10 5 -0.003 -0.005 -0.01 10 5 -3 -10 -30 -100 -300 -0.03 -0.05 -0.1 -0.2 COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V) r th - t w TOTAL POWER DISSIPATION PT (W) TRANSIENT THERMAL RESISTANCE r th ( C/W) 12 10 8 6 4 2 0 0 50 2 3 1 P T - Ta 1 Tc=25 C 2 WITH 7.5cm 2 0.8mm CERAMIC SUBSTRATE 3 Ta=25 C CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK 2 WITHOUT HEAT SINK 300 2 100 1 10 1 0.01 0.1 1 10 100 100 150 200 PULSE WIDTH t w (s) AMBIENT TEMPERATURE Ta ( C) SAFE OPERATING AREA -3 COLLECTOR CURRENT I C (A) I C (Pulse) MAX. * I C MAX. 20 -1 -0.5 -0.3 Pw 10 0m s* =1m * ited Lim S/b mS S * -0.1 -0.03 -0.01 -0.005 -1 * SINGLE NONREPETITVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 2 4/4 |
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